| PART |
Description |
Maker |
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR |
OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A，输出功率直20W50V输出，带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管
From old datasheet system
SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| BFR540 BFR540_4 BFR540/T1 BFR540-2015 |
NPN 9 GHz wideband transistor
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND
|
Quanzhou Jinmei Electronic ...
Philips
|
| IRGI4061DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRGB4064DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
